Journal
PHYSICA B-CONDENSED MATTER
Volume 447, Issue -, Pages 56-61Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2014.04.065
Keywords
Structural; Electronic properties; n-type semiconductor; p-type semiconductor; Density functional theory; Partial densities of states
Categories
Ask authors/readers for more resources
The structural and electronic properties of N, P, As and Sb doped (9.0) single-walled SiC nanotubes (SWSiCNTs) are investigated by the first-principle theory. The calculated results indicated that one P, As or Sb atom substituted for one C atom, which could be considered as n-type semiconductors. When one N, P, As or Sb replace one Si atom, the model shows the character of semi-metallic, n-type semiconductor, p-type semiconductor respectively. These results indicated that with the addition of atomic radius and reduction of electronegativity, dopant of VA elements will bring bizarre change of electronic properties. These results are expected to give valuable information in building nanoscale electronic devices. (C) 2014 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available