Journal
PHYSICA B-CONDENSED MATTER
Volume 407, Issue 10, Pages 1631-1633Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2011.09.103
Keywords
Organic; Photovoltaic; Heterojunction; Carriers
Categories
Funding
- South African National Research Foundation (NRF)
- ARL [W911NF-07-1-0545]
- US Department of Energy [DE-FG36-08GO18020]
- National Science Foundation [ECCS 0644690]
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In this study, P3HT:PCBM organic photovoltaic (OPV) devices, with or without ZnO nanoparticles buffer layer between the photoactive layer (P3HT:PCBM) and the cathode (Al top electrode), were fabricated. The devices were annealed at 145 degrees C either before or after depositing the top electrode. The objective of this study was to investigate the effects of the ZnO buffer layer and pre-/post-fabrication annealing on the general performance of these devices. The short-circuit current density (J(SC)), open-circuit voltage (V-OC) and the external quantum efficiency (EQE) of the OPV devices were improved by the insertion of the ZnO layer and post-fabrication annealing. The post-fabrication annealed devices, with or without the ZnO layer, exhibited higher values of J(SC), V-OC and EQE than those of similar devices annealed before depositing the Al metal. This can be attributed to, among other things, improved charge transport across the interface between the photoactive layer and the Al top electrode as a result of post-annealing induced modification of the interface morphology. (C) 2011 Elsevier B.V. All rights reserved.
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