4.5 Article

The impedance spectroscopic study and dielectric relaxation in A(Ni1/3Ta2/3)O3 [A=Ba, Ca and Sr]

Journal

PHYSICA B-CONDENSED MATTER
Volume 407, Issue 18, Pages 3740-3748

Publisher

ELSEVIER
DOI: 10.1016/j.physb.2012.05.054

Keywords

Ceramics; Chemical synthesis; Impedance spectroscopy; Dielectric properties

Funding

  1. Defense Research Development Organization of India [ERIPR/ER/0904511/M/01/1252]
  2. DST PURSE program JU

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We present the results of impedance spectroscopic study with its analytical interpretations in the framework of electric modulus formalism for Barium Nickel Tantalate Ba(Ni1/3Ta2/3)O-3 (BNT), Calcium Nickel Tantalate Ca(Ni1/3Ta2/3)O-3 (CNT) and Strontium Nickel Tantalate Sr(Ni1/3Ta2/3)O-3 (SNT) synthesized by the solid-state reaction technique. The results of powder X-ray diffraction study reveal that BNT and SNT crystallize in cubic structure with lattice parameter a=4.07 angstrom and 3.98 angstrom respectively, whereas CNT crystallizes in monoclinic structure having lattice parameters, a=5.71 angstrom, b=13.45 angstrom and c=5.47 angstrom with beta=118.3 degrees. The logarithmic angular frequency dependence of the real part of complex dielectric permittivity and loss tangent as a function of temperature indicate significant dielectric relaxation in the samples, which have been explained by the Debye theory. The frequency dependence of the loss peak and the imaginary part of electrical modulus are found to obey the Arrhenius law. The relaxation mechanism of these samples is modeled by the Cole-Cole equation. This confirms that the polarization mechanism in BNT, CNT and SNT is due to the bulk effect arising in semiconductive grains. The scaling behavior of imaginary part of electric modulus M '' suggests that the relaxation describes the same mechanism at various temperatures but relaxation frequency is strongly temperature dependent. The normalized peak positions of delta/tan delta(m) and M ''/M ''(m) versus log omega for BNT, CNT and SNT do not overlap completely and are very close to each other. These indicate the presence of both long-range and localized relaxation. Due to their high dielectric constant and low loss tangent, these materials may find several technological applications such as in capacitors, resonators, filters and integrated circuits. (c) 2012 Elsevier B.V. All rights reserved.

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