4.5 Article

The effect of surface roughness on lattice thermal conductivity of silicon nanowires

Journal

PHYSICA B-CONDENSED MATTER
Volume 406, Issue 13, Pages 2515-2520

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2011.03.046

Keywords

Roughness; Nanowire; Phonon; Scattering

Funding

  1. National Basic Research Program of China [2011CB707605]
  2. Natural Science Foundation of China [50875047, 50776017, 50925519]
  3. Jiangsu Province Nature Science Foundation [BK2006510, BK2008201]

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A theoretic model is presented to take into account the roughness effects on phonon transport in Si nanowires (NWs). Based on the roughness model, an indirect Monte Carlo (MC) simulation is carried out to predict the lattice thermal conductivities of the NWs with different surface qualities. Through fitting the experimental data with the MC predictions, the scattering strength on phonons from the boundary, umklapp phonon-phonon processes and impurities can be estimated. It is found that the scattering on phonons by the roughness cell boundaries in a rough nanowire can reduce the phonon mean free path to be smaller than the nanowire diameter, the Casimir limit of the phonon mean free path in a flat nanowire for phonons engaged in completely diffused boundary scattering processes. (C) 2011 Elsevier B.V. All rights reserved.

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