Journal
PHYSICA B-CONDENSED MATTER
Volume 406, Issue 13, Pages 2548-2554Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2011.03.060
Keywords
Rashba field; GaN; Electron spin resonance; Magnetoplasma resonance
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Funding
- Funds for Science, Poland [PBZ/MNiSW/07/2006/39, N N202 1058 33]
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We discuss problem of Rashba field in bulk GaN and in GaN/AlxGa1-xN two-dimensional electron gas, basing on results of X-band microwave resonance experiments. We point at large difference in spin-orbit coupling between bulk material and heterostructures. We observe coupled plasmon-cyclotron resonance from the two-dimensional electron gas, but no spin resonance, being consistent with large zero-field spin splitting due to the Rashba field reported in the literature. In contrast, small anisotropy of g-factor of GaN effective mass donors indicates rather weak Rashba spin-orbit coupling in bulk material, not exceed 400 G, alpha(BIA) < 4 x 10(-13) eVcm. Furthermore, we observe new kind of electron spin resonance in GaN, which we attribute to surface electron accumulation layer. We conclude that the sizable Rashba field in GaN/AlxGa1 xN heterostructures originates from properties of the interface. (C) 2011 Elsevier B.V. All rights reserved.
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