4.5 Article

Electronic structure and optical properties of Sb2S3 crystal

Journal

PHYSICA B-CONDENSED MATTER
Volume 406, Issue 2, Pages 287-292

Publisher

ELSEVIER
DOI: 10.1016/j.physb.2010.10.070

Keywords

DFT; GGA; FP-LAPW; Semiconductors; Electronic structure; Dielectric function; Optical properties

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The electronic and optical properties of Sb2S3 are studied using the full potential linearized augmented plane wave (FP-LAPW) method as implemented in Wien2k. In this approach, the alternative form of the generalized gradient approximation (GGA) proposed by Engel and Vosko (EV-GGA) was used for the exchange correlation potential. The calculated band structure shows a direct band gap. The contribution of different bands was analyzed from total and partial density of states curves. Moreover, the optical properties, including the dielectric function, absorption spectrum, refractive index, extinction coefficient, reflectivity and energy-loss spectrum are all obtained and analyzed in detail. (C) 2010 Elsevier B.V. All rights reserved.

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