Journal
PHYSICA B-CONDENSED MATTER
Volume 406, Issue 22, Pages 4296-4299Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2011.08.068
Keywords
Graphenes; Doping; Charge distribution; SiC
Categories
Funding
- National Natural Science Foundation of China [10874089, 51032002]
- Natural Science Foundation of Jiangsu Province of China [BK2008398]
- National High Technology Research and Development Program [2011AA050526]
- Jiangsu Innovation Program for Graduate Education [CXZZ11_0190, CX08B_005Z]
- China Postdoctoral Science Foundation [20090461114]
- Jiangsu Planned Projects for Postdoctoral Research Funds [0902093C]
Ask authors/readers for more resources
We performed first-principle density-functional theory calculations to study the charge distributions of Li-doped few-layer graphenes on C-terminated 6H-SiC (000 (1) over bar) surface. The charge transfer is investigated based on the electronic band structure and corresponding charge density difference. Furthermore, the values of transferred charges calculated by the Bader charge population scheme are given. It reveals that the graphene layers are all n-type doped. Most of the transferred charges reside on the bounding graphene layer between Li atom and graphenes and, only a few on the interior layers and substrate. It is found that the C-terminated SiC (000 (1) over bar) substrate supporting graphenes hardly influences the charge distribution of Li-doped graphenes. (C) 2011 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available