Journal
PHYSICA B-CONDENSED MATTER
Volume 404, Issue 22, Pages 4354-4358Publisher
ELSEVIER
DOI: 10.1016/j.physb.2009.09.023
Keywords
Silicon vacancy; SiC; EPR; ODMR; PL
Categories
Ask authors/readers for more resources
The isolated silicon vacancy is one of the basic intrinsic defects in SiC. We present new experimental data as well as new calculations on the silicon vacancy defect levels and a new model that explains the optical transitions and the magnetic resonance signals observed as occurring in the singly negative charge state of the silicon vacancy in 4H and 6H SiC. (C) 2009 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available