4.5 Article Proceedings Paper

Aging and memory in a two-dimensional electron system in Si

Journal

PHYSICA B-CONDENSED MATTER
Volume 404, Issue 3-4, Pages 466-469

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.physb.2008.11.041

Keywords

Glassy dynamics; Metal-insulator transition; Aging

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The relaxations of conductivity after a temporary change of carrier density n(s) during the waiting time t(w) have been studied in a strongly disordered two-dimensional electron system in Si. At low enough n(s)

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