Journal
PHYSICA B-CONDENSED MATTER
Volume 404, Issue 1, Pages 122-126Publisher
ELSEVIER
DOI: 10.1016/j.physb.2008.10.013
Keywords
Quantum dot; Hydrogenic donor impurity; Binding energy; Electric held
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Funding
- Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry (PRC)
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Within the framework of effective mass approximation, the binding energy of a hydrogenic donor impurity in zinc-blende GaN/AlxGa1-xN spherical quantum dot (QD) is investigated using the plane wave basis. The results show that the binding energy is highly dependent on impurity position, QD size, Al content and external field. The binding energy is largest when the donor impurity is located at the centre of the QD and the binding energy of impurity is degenerate for symmetrical positions with respect to the centre of QD without the external electric field. The maximum of the donor binding energy is shifted from the centre of QD and the degenerating energy levels for symmetrical positions with respect to the centre of QD are split in the presence of the external electric field. The binding energy is more sensitive to the external electric field for the larger QD and lower Al content. In addition, the Stark shift of the binding energy is also calculated. (c) 2008 Elsevier B.V. All rights reserved.
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