Characteristics of vanadium dioxide films deposited by RF-magnetron sputter deposition technique using V-metal target

Vanadium dioxide films were deposited using reactive RF-magnetron sputter deposition technique and characterized without or with post-annealing process for the application of thermal sensors. The film thickness variation on a 4-in wafer was less than +/-2%. As-deposited film showing an abrupt metal-insulator transition (MIT) could be obtained with O-2 fraction of 6%. The films deposited at 400 and 450 degrees C showed abrupt changes of resistance in the order of 103 near typical MIT temperature Of VO2 without post-annealing. The 110-nm-thick VO2 film deposited at 450 degrees C on c-sapphire revealed the resistance change of 1.2 x 10(4) near 68 degrees C after annealing at 510 degrees C. (C) 2007 Elsevier B.V. All rights reserved.