Photocatalytic activity of S- and F-doped TiO2 in formic acid mineralization

Two series of doped titanium dioxide samples (S-TiO2 and F-TiO2) were prepared by the sol-gel method in the presence of different amounts of dopant source (thiourea and NH4F, respectively), followed by calcination at 500, 600 or 700 degrees C, and characterised by BET, UV-vis absorption, XPS, HRTEM, XRD and EPR analyses. Reference undoped materials were prepared by the same synthetic procedure. Their photocatalytic activity under visible light was investigated employing the photocatalytic degradation of formic acid in aqueous suspension as test reaction. S-doped TiO2 showed a photocatalytic activity quite similar to that of undoped materials. In this regard, the insertion of S, characterised by a relatively large ionic radius, into the TiO2 crystalline structure appears rather difficult, as confirmed by XPS analysis. On the contrary, moderate F doping was beneficial in increasing the rate of formic acid photocatalytic degradation, especially for photocatalysts calcined at high temperature, consisting of highly crystalline pure anatase, in which the rate of detrimental charge carrier recombination was reduced. For both series of doped materials, high doping levels appear to limit the semiconductor photoactivity, probably due to the formation of a progressively increasing number of charge recombination centres. The EPR characterisation of the investigated doped TiO2 samples evidenced the presence of nitrogen containing species (nitric oxide radical encapsulated in micro-void, with no photoactivity, and N-b(center dot) species, active in visible light sensitisation) and of titanium reduced centres Ti3+, due to charge imbalance consequent to dopant introduction in the TiO2 lattice either in anionic (F-) or in cationic form (S6+).