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Termination control of electronic phases in oxide thin films and interfaces: LaAlO3/SrTiO3(001)

Publisher

ROYAL SOC
DOI: 10.1098/rsta.2012.0202

Keywords

oxide interfaces; density functional theory; magnetic thin oxide films; metal-insulator transition; metal-insulator contacts; Schottky barrier

Funding

  1. DFG [SFB/TR80]
  2. Leibniz Computational Center Garching [h0721]
  3. CONACYT (Mexico)
  4. DAAD (Germany)
  5. U.S. Department of Energy [DE-FG02-04ER46111]
  6. U.S. Department of Energy (DOE) [DE-FG02-04ER46111] Funding Source: U.S. Department of Energy (DOE)

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A wealth of intriguing properties emerge in the seemingly simple system composed of the band insulators LaAlO3 and SrTiO3 such as a two-dimensional electron gas, superconductivity and magnetism. In this paper, we review the current insight obtained from first principles calculations on the mechanisms governing the behaviour of thin LaAlO3 films on SrTiO3(001). In particular, we explore the strong dependence of the electronic properties on the surface and interface termination, the finite film thickness, lattice polarization and defects. A further aspect that is addressed is how the electronic behaviour and functionality can be tuned by an SrTiO3 capping layer, adsorbates and metallic contacts. Lastly, we discuss recent reports on the coexistence of magnetism and superconductivity in this system for what they might imply about the electronic structure of this system.

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