Journal
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
Volume 370, Issue 1977, Pages 4944-4957Publisher
ROYAL SOC
DOI: 10.1098/rsta.2012.0200
Keywords
flexoelectric effect; ferroelectric; epitaxial thin film; strain gradient
Categories
Funding
- National Research Foundation of Korea
- Korean Ministry of Education, Science, and Technology [2010-0020416]
- National Research Foundation of Korea [과06A1102] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Interfacial strain gradients in oxide epitaxial thin films provide an interesting opportunity to study flexoelectric effects and their potential applications. Oxide epitaxial thin films can exhibit giant and tunable flexoelectric effects, which are six or seven orders of magnitude larger than those in conventional bulk solids. The strain gradient in an oxide epitaxial thin film can generate an electric field above 1 MVm(-1) by flexoelectricity, large enough to affect the physical properties of the film. Giant flexoelectric effects on ferroelectric properties are discussed in this overview of recent experimental observations.
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