Journal
PHILOSOPHICAL MAGAZINE
Volume 88, Issue 10, Pages 1569-1579Publisher
TAYLOR & FRANCIS LTD
DOI: 10.1080/14786430802235804
Keywords
grain boundary structure; dislocations; alumina; transmission electron microscopy
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Funding
- National Center for Electron Microscopy
- US Department of Energy [DE-AC02-05CH1123]
- MCyT [*FIS2006-12436-C02-02]
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Interfacial defects, such as gram boundary dislocations, play all important role in the creep behavior of alumina. In the present work, interfacial defects are analyzed in detail using a Volterra approach without a reference to a near-coincidence description. We investigate disconnections (boundary steps with dislocation character) in a diffusion-bonded alumina bicrystal, with a misorientation close to the rhombohedral twin, by conventional and atomic resolution electron microscopy. The bicrystal contains two arrays of parallel disconnections with Burgers vectors that have alternating equal and opposite twist components, so there is no long-range stress field. This configuration is discussed in terms of the stability of different grain boundary disconnection arrangements. The complex core structure of the defects is revealed by high resolution electron microscopy using exit wave reconstruction. It is shown that the defects are dissociated into two partials that delimit grain boundary segments with alternating structure.
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