Journal
ORGANIC ELECTRONICS
Volume 15, Issue 8, Pages 1884-1889Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2014.04.032
Keywords
Organic field-effect transistors; Transfer printing; Heterojunctions; Conjugated polymers
Funding
- Pioneer Research Center Program through the National Research Foundation of Korea [NRF-2013M3C1A3065528]
- Center for Advanced Soft-Electronics - Ministry of Science, ICT & Future Planning the Ministry of Science, ICT & Future Planning [2013M3A6A5073183]
- Dongguk University Research Fund
- Grants-in-Aid for Scientific Research [26286040] Funding Source: KAKEN
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Solution-processed n-type organic field effect transistors (OFETs) are in need of proper metal contact for improving injection and mobility, as well as balanced hole mobility for building logic circuit units. We address the two distinct problems by a simple technique of transfer-printing. Transfer-printed Au contacts on a terrylene-based semiconductor (TDI) significantly reduced the inverse subthreshold slope by 5.6 V/dec and enhanced the linear mobility by over 5 times compared to evaporated Au contacts. Hence, devices with a high-work-function metal (Au) are comparable with those with low-work-function metals (Al and Ca), indicating a fundamental advantage of transfer-printed electrodes in electron injection. We also transfer-printed a poly(3-hexylthiophene) (P3HT) layer onto TDI to construct a double-channel ambipolar transistor by a solution process for the first time. The transistor exhibits balanced hole and electron mobility (3.0 x 10(-3) and 2.8 x 10(-3) cm(2) V-1 s(-1)) even in a coplanar structure with symmetric Au electrodes. The technique is especially useful for reaching intrinsic mobility of new materials, and enables significant enlargement of the material tanks for solution-processed functional heterojunction OFETs. (C) 2014 Elsevier B. V. All rights reserved.
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