Journal
ORGANIC ELECTRONICS
Volume 15, Issue 4, Pages 844-849Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2014.01.019
Keywords
Heterojunction; Photodetector; Zinc oxide; Metal porphyrin; Nanowire network
Funding
- National Basic Research Program of China [2010CB934100]
- National Natural Science Foundation of China [21273272, 21303250, 21003153]
- Jiangsu Province Natural Science Foundation of China [BK2012192]
- Chinese Academy of Sciences
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Hybrid heterojunction films of zinc octaethylporphyrin/zinc oxide (ZnOEP/ZnO) were fabricated by a facile solution process, in which ZnO nanoparticles were directly added to ZnOEP nanowire networks. The devices based on the as-fabricated films displayed high sensitivity and stable photoswitching. The largest I-on/I-off switching ratio of the phototransistor devices was over 10(3). Moreover, the ZnOEP/ZnO heterojunctions could effectively prevent the photogenerated charge carrier recombination and prolong the photocarrier lifetime. Therefore, higher photocurrent or photoresponsivity of hybrid photodetectors were obtained. The excellent performance associated with facile, large-scale, and cost-effective fabrication process of ZnOEP/ZnO heterojunctions is promising for photodetector and photoswitch application. (C) 2014 Elsevier B.V. All rights reserved.
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