Journal
ORGANIC ELECTRONICS
Volume 15, Issue 11, Pages 3061-3069Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2014.08.048
Keywords
Phototransistor; Anthradithiophene; Potassium alumina; OFET
Funding
- National Science Foundation Division of Materials Research [1005398]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1005398] Funding Source: National Science Foundation
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Low-voltage organic phototransistors (OPTs) are attractive candidates for optoelectronic applications such as photodetectors and memory devices. Here we describe a solution-processed low-voltage organic phototransistor based on a triethylgermylethynylsubstituted anthradithiophene (diF-TEG ADT). Two kinds of dielectric materials were used: 80-nm-thick potassium alumina (PA) and 300-nm-thick thermally grown SiO2. To investigate its application in a moist environment, the performance at different humidities was characterized. Results showed that the device was very stable in high humidity. A major change in drain current (I-DS) was observed when connecting or disconnecting the gate electrode to the device. This feature may motivate the application of diF-TEG ADT-based phototransistors as multistage photo-controlled memory devices. (C) 2014 Elsevier B.V. All rights reserved.
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