Journal
ORGANIC ELECTRONICS
Volume 15, Issue 4, Pages 886-892Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2014.01.014
Keywords
Charrier transport; Inverted quantum dot LED; Low-work function; PEIE
Funding
- KIST Institution Program [2Z03880, 2E24871]
- Industrial Core Technology Development Program from the Ministry of Trade, Industry Energy (MOTIE) [2MR0890]
- National Research Council of Science & Technology (NST), Republic of Korea [2E24870] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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An inverted-type quantum-dot light-emitting-diode (QD LED), employing low-work function organic material polyethylenimine ethoxylated (PEIE) as electron injection layer, was fabricated by all solution processing method, excluding anode electrode. From transmission electron microscopy (TEM) and scanning electron microscopy (SEM) studies, it was confirmed that CdSe@ZnS QDs with 7 nm size were uniformly distributed as a monolayer on PEIE layer. In this inverted QD LED, two kinds of hybrid organic materials, [poly (9,9-di-n-octyl-fluorene-alt-benzothiadiazolo)(F8BT) + poly(N,N'-bis(4-butylphenyl)-N,N'-bis( phenyl) benzidine (poly-TPD)] and [4,4'-N,N'-dicarbazole-biphenyl (CBP) + poly-TPD], were adopted as hole transport layer having high highest occupied molecular orbital (HOMO) level for improving hole transport ability. At a low-operating voltage of 8 V, the device emits orange and red spectral radiation with high brightness up to 2450 and 1420 cd/m(2), and luminance efficacy of 1.4 cd/A and 0.89 cd/A, respectively, at 7 V applied bias. Also, the carrier transport mechanisms for the QD LEDs are described by using several models to fit the experimental I-V data. (C) 2014 Elsevier B.V. All rights reserved.
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