Flexible nano-hybrid inverter based on inkjet-printed organic and 2D multilayer MoS2 thin film transistor

We report a novel platform on which we design a flexible high-performance complementary metal-oxide-semiconductor (CMOS) inverter based on an inkjet-printed polymer PMOS and a two-dimensional (2D) multilayer molybdenum disulfide (MoS2) NMOS on a flexible substrate. The initial implementation of a hybrid complementary inverter, comprised of 2D MoS2 NMOS and polymer PMOS on a flexible substrate, demonstrates a compelling new pathway to practical logic gates for digital circuits, achieving extremely low power consumption with low sub-1 nA leakage currents, high performance with a voltage gain of 35 at 12 V supply voltage, and high noise margin (larger than 3 V at 12 V supply voltage) with low processing costs. These results suggest that inkjet-printed organic thin film transistors and 20 multilayer semiconducting transistors may form the basis for potential future high performance and large area flexible integrated circuitry applications. (C) 2014 Elsevier B.V. All rights reserved.