Reduced contact resistance and highly stable operation in polymer thin-film transistor with aqueous MoOx solution contact treatment

We report on a newly developed solution process using MoO3 for reducing source and drain (S/D) electrodes in organic thin-film transistor (TFT). By taking advantage of the difference in surface wettability between the gate dielectric layer and the S/D electrodes, the electrode treatment using the MoOx solution was applied to polymer TFT with short channel lengths less than 10 mu m. The contact resistance was noticeably reduced at the interface of the S/D electrodes in a polymer TFT using a pBTTT-C16. Furthermore, the field effect mobility for this TFT was enhanced from 0.03 to 0.1 cm(2)/V s. Most notably, the threshold voltage (Vth) shift under gated bias stress was less than 0.2 V after 10(5) s, which is comparable to that of conventional poly crystalline Si TFT. (C) 2012 Elsevier B.V. All rights reserved.