Hydrazine-based n-type doping process to modulate Dirac point of graphene and its application to complementary inverter

In this paper, chemical n-type doping process of graphene using hydrazine monohydrate solution (N2H4-H2O) is demonstrated. This method successfully modulates the Dirac point of pristine graphene by adjusting the concentration of hydrazine solution and also provides an effective n-type doping in graphene. First, the hydrazine treated and pristine graphene films are systematically investigated by Raman and FT-IR spectroscopy. Second, with p-and n-channel FETs fabricated on both pristine and hydrazine treated n-type graphene, complementary graphene inverter is demonstrated. (C) 2013 Elsevier B. V. All rights reserved.