Journal
ORGANIC ELECTRONICS
Volume 14, Issue 12, Pages 3186-3189Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2013.09.002
Keywords
Organic spin valve; Heusler alloy; Magnetoresistance
Funding
- Ministry of Education, Culture, Sports, Science, and Technology of Japan [23350091]
- Global COE Program
- Grants-in-Aid for Scientific Research [23350091] Funding Source: KAKEN
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We report room-temperature magnetoresistance in sandwich structures consisting of Co2MnSi/organic spacer/Co. We have prepared the epitaxial films of a Heusler alloy Co2MnSi on MgO (001) by pulsed laser deposition, followed by thermal depositions of organic and Co layers. The spin-valve with an organic layer of N, N-bis (3-methylphenyl)-N, N-diphenylbenzidine exhibited a positive magnetoresistance ratio of up to 7.8%, which was the highest value among organic spin-valves at room temperature. (C) 2013 Elsevier B.V. All rights reserved.
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