Journal
ORGANIC ELECTRONICS
Volume 12, Issue 7, Pages 1146-1151Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2011.04.005
Keywords
Silk-tronics; Organic field effect transistors; Organic light emitting transistors; Natural biopolymers
Funding
- EU [PF6 035859-2 (BI-MORE), FP7-ICT-248052]
- Italian MIUR [FIRB-RBIP06YWBH (NODIS), FIRB-RBIP0642YL (LUCI), FIRB-RBPR05JH2 (ITALNANONET)]
- Italian MSE
- US Army Research Laboratory
- US Army Research Office [W911 NF-07-1-0618]
- DARPA-DSO
- AFOSR
- NIH [P41]
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We present the integration of a natural protein into electronic and optoelectronic devices by using silk fibroin as a thin film dielectric in an organic thin film field-effect transistor (OFET) ad an organic light emitting transistor device (OLET) structures. Both n-(perylene) and ptype (thiophene) silk-based OFETs are demonstrated. The measured electrical characteristics are in agreement with high-efficiency standard organic transistors, namely charge mobility of the order of 10 (2) cm(2)/V s and on/off ratio of 10(4). The silk-based optoelectronic element is an advanced unipolar n-type OLET that yields a light emission of 100 nW. (C) 2011 Elsevier B.V. All rights reserved.
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