Journal
ORGANIC ELECTRONICS
Volume 11, Issue 6, Pages 996-1004Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2010.03.016
Keywords
Organic field-effect transistor; Cyanoethylated pullulan; Gate insulator; High-k polymer; Flexible transistor
Funding
- Korea Science and Engineering Foundation (KOSEF) through the National Research Laboratory
- Polymer Gel Cluster group of the Korean government
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Low-voltage operable organic field-effect transistors (OFETs) were fabricated with a high-k polymer gate insulator, consisting of cyanoethylated pullulan (CEP) and poly(methylated melamine-co-formaldehyde) (PMMF) as a cross-linker. Effect of the cross-linker amount on the dielectric properties of the film was studied and transistor performance was evaluated. At the optimum PMMF contents, field-effect mobility as high as 2.16 cm(2)/V s, on/off current ratio of similar to 3 x 10(5), low hysteresis (Delta V-th similar to 0.01 V) and a steep inverse subthreshold slope of 0.066 V/dec were obtained. A utilization of stainless steel as a gate metal and substrate markedly improved the device performance under a low-voltage operation (similar to 1 V) due to the positively shifted threshold voltage from the work function change. The devices showed very little degradation in electrical properties with bending. (C) 2010 Elsevier B.V. All rights reserved.
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