4.6 Article

Solution deposited NiO thin-films as hole transport layers in organic photovoltaics

Journal

ORGANIC ELECTRONICS
Volume 11, Issue 8, Pages 1414-1418

Publisher

ELSEVIER
DOI: 10.1016/j.orgel.2010.05.008

Keywords

Hole transport layer; Nickel oxide; NiO; Organic solar cells; Anode surface modifier; PEDOT:PSS

Funding

  1. U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences [DE-SC0001009, DE-SC0001084]
  2. U.S. Department of Energy, Office of Science's Science Undergraduate Laboratory
  3. U.S. Department of Energy through the National Center for Photovoltaics [DOE-AC36-08GO28308]
  4. Center for Interface Science: Solar-Electric Materials (CIS:SEM)

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Organic solar cells require suitable anode surface modifiers in order to selectively collect positive charge carriers and improve device performance. We employ a nickel metal organic ink precursor to fabricate NiO hole transport layers on indium tin oxide anodes. This solution deposited NiO annealed at 250 degrees C and plasma treated, achieves similar OPV device results reported with NiO films from PLD as well as PEDOT:PSS. We demonstrate a tunable work function by post-processing the NiO with an O-2-plasma surface treatment of varied power and time. We find that plasma treatment is necessary for optimal device performance. Optimal devices utilizing a solution deposited NiO hole transport layer show lower series resistance and increased fill factor when compared to solar cells with PEDOT: PSS. (C) 2010 Elsevier B.V. All rights reserved.

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