Journal
ORGANIC ELECTRONICS
Volume 11, Issue 11, Pages 1779-1785Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2010.07.023
Keywords
Electronic structure; Bulk heterojunction; Blend; P3HT; PCBM; Interface dipole
Funding
- Department of Energy [DE-FG02-04ER46165]
- Office of Science DOE Energy Frontier Research Center for Interface Science: Solar Electric Materials [DE-S0001084]
- Princeton MRSEC [DMR-0819860]
- ONR [N000140811175]
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This article focuses on the electronic structure of the poly(3-hexylthiophene):phenyl-[6,6]-C61 butyric acid methyl ester (P3HT:PCBM) blend, widely used in bulk heterojunction (BHJ) solar cells. Given the fact that the surface of the blend film is a nearly pure P3HT wetting layer, we use a lift-off method to access the originally buried surface, which is rich in both P3HT and PCBM and thus representative of the BHJ. The combination of direct and inverse photoemission spectroscopy on this surface leads to a determination of the energy gap between the lowest unoccupied molecular orbital (LUMO) of the acceptor and the highest occupied molecular orbital (HOMO) of the donor. The gap is similar to 1.4 eV, which implies a 0.5-0.6 eV interface dipole barrier between the two materials. The energy gap is found to be stable versus in situ annealing up to 100 degrees C. (C) 2010 Elsevier B.V. All rights reserved.
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