Journal
ORGANIC ELECTRONICS
Volume 11, Issue 12, Pages 1891-1895Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2010.08.017
Keywords
Top-emitting organic light-emitting devices; Fe3O4; Anodic buffer
Funding
- NSFC [60677016, 60977025, 60877019]
- NECT [070354]
- Jilin Provincial Science and Technology Foundation [20070109]
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Highly efficient top-emitting organic light-emitting devices (TOLEDs) using a Fe3O4 modified Ag anode have been demonstrated. The tris-(8-hydroxyquinoline) aluminum-based TOLEDs exhibit a very low turn-on voltage of 2.5 V and a high current efficiency of 8.1 cd/A. The improved properties for the TOLEDs is mainly due to the enhanced hole injection by introducing the anodic buffer. The mechanism of this enhanced hole injection is studied by the X-ray and ultra-violet photoemission spectroscopy, which demonstrated that the dipole layer is formed at the anode/organic interface and the hole-injection barrier is therefore reduced after introducing the thin Fe3O4 film between the Ag anode and the hole-transport layer. (C) 2010 Elsevier B. V. All rights reserved.
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