Journal
ORGANIC ELECTRONICS
Volume 11, Issue 8, Pages 1394-1398Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2010.06.003
Keywords
Organic thin film transistor; Picene; O-2 sensor; Mobility reduction factor; Hysteresis
Funding
- MEXT, Japan [18340104, 20045012]
- Okayama University
- Japan Science and Technology Agency
- Grants-in-Aid for Scientific Research [22540364, 18340104, 20045012] Funding Source: KAKEN
Ask authors/readers for more resources
O-2 gas sensing behaviors are studied in picene thin film field-effect transistors (FETs) with hydrophobic polymer (Cytop(TM) or polystyrene) coated SiO2 gate dielectrics. Picene thin film FETs show a rapid reduction of hysteresis in transfer curves recorded in forward and reverse measurement modes, compared to a picene FET with hexamethydisilazane-coated SiO2. The picene FETs show very sensitive O-2 gas sensing effects down to similar to 10 ppm. A quantitative analysis is presented of the gate voltage (V-G) dependent mobility induced by O-2 exposure, i.e., the suppression of drain current at high V-G. (C) 2010 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available