4.6 Article

ZnO nano-ridge structure and its application in inverted polymer solar cell

Journal

ORGANIC ELECTRONICS
Volume 10, Issue 8, Pages 1473-1477

Publisher

ELSEVIER
DOI: 10.1016/j.orgel.2009.08.011

Keywords

Polymer solar cell; Inverted polymer solar cell; Zinc oxide; Nano-ridge

Funding

  1. Office of Naval Research [N00014-04-1-0434]
  2. National Science Council of Taiwan [NSC-0962917-1-009-112]

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We report a unique nano-ridge structure of zinc oxide (ZnO) and its application in high performance inverted polymer solar cells. The ZnO nano-ridge structure was formed by a sol-gel process using a ramp annealing method. As the solvent slowly evaporated due to the low heating rate, there was sufficient time for the gel particles to structurally relax and pile up, resulting in a dense and undulated film. Nano-ridges with peak as high as 120 nm and valley to valley distance of about 500 nm were formed. This film provided an effective hole blocking layer and also an increased interfacial area for electron collection. An inverted bulk heterojunction polymer solar cell was fabricated using the ZnO nano-ridge film as the electron collecting layer. The device showed a high power conversion efficiency of 4.00%, an improvement of about 25% over similar solar cells made with a planar film of ZnO nanoparticles. (C) 2009 Elsevier B.V. All rights reserved.

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