Journal
ORGANIC ELECTRONICS
Volume 10, Issue 1, Pages 12-17Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2008.09.002
Keywords
Polyimide; Low temperature processability; Imidization ratio; Gate insulator; Organic thin-film transistor
Funding
- Korean Ministry of Science and Technology
- Top Brand Project
- Korea Evaluation Institute of Industrial Technology (KEIT) [F0004010-2009-32] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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This paper demonstrates the effects of the imidization ratio of polyimide gate insulators on the performance of organic thin-film transistors (OTFTs). We report the synthetic results of polyimide films imidized at a temperature of 200 degrees C along with an easily removed organic base catalyst (1,8-diazabicyclo[5.4.0]undec-7-ene, DBU), and their application in gate insulators of organic thin-film transistors. The degree of imidization increased to almost 100% after a thermal treatment at 200 degrees C for 40 min in the presence of DBU. The performance of the pentacene OTFT dramatically improved by using low temperature cured polyimide film as the gate insulator. (C) 2008 Elsevier B.V. All rights reserved.
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