4.6 Article

Organic complementary inverters with polyimide films as the surface modification of dielectrics

Journal

ORGANIC ELECTRONICS
Volume 10, Issue 5, Pages 1001-1005

Publisher

ELSEVIER SCIENCE BV
DOI: 10.1016/j.orgel.2009.03.017

Keywords

Pentacene; Organic complementary metal oxide semiconductor; PTCDI-C8H17; Propagation delay

Funding

  1. National Science Council, Taiwan [NSC 96-2112-M-006-015-MY3, NSC 96-2221-E-006-287]

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The organic complementary metal oxide semiconductor (O-CMOS) inverters were integrated with the p-type pentacene-based transistors and n-type N,N'-dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H17)-based transistors. Polyimide (PI) films were inserted between the active layers and dielectrics as the role of surface modification. The performances of the O-CMOS including the mobility, on/off ratio, subthreshold slope, threshold voltage, gains, delay time, and leakage Current suppression were dramatically enhanced when PI layer was introduced. An ideal O-CMOS inverter with the propagation delay time of 52 mu s at 1 kHz was achieved for the device with PI modification layer. The detail mechanism for performance improvement was discussed. (C) 2009 Elsevier B.V. All rights reserved.

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