Journal
ORGANIC ELECTRONICS
Volume 9, Issue 1, Pages 70-76Publisher
ELSEVIER
DOI: 10.1016/j.orgel.2007.09.005
Keywords
organic thin-film transistor; P3HT; polymer dielectric; interface; solvents
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This paper presents a detailed characterization of different thermosetting polymers to be used as gate dielectrics in organic thin-film transistors. Selected materials yield smooth films with good insulation properties and offer attractive processing conditions. Bottom-gate transistors were prepared using these dielectrics and compared to hybrid transistors with surface-treated SiO2 as the dielectric. Gate bias induced leakage and solvent effects were investigated by preparing metal/ insulator/semiconductor devices. Poly(3-hexylthiophene) (P3HT) transistors with organic dielectrics exhibited higher channel conductivity and lower mobility values with respect to P3HT-hybrid transistors and pentacene transistors. The importance of dielectric/semiconductor interface was discussed by comparing the performances of pentacene and P3HT transistors produced on different dielectrics. (c) 2007 Elsevier B.V. All rights reserved.
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