Journal
THIN SOLID FILMS
Volume 589, Issue -, Pages 145-152Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.04.057
Keywords
CdS; ZnO; SILAR; Sub-band-gap processes; Photoelectrochemistry
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Funding
- State Funds for Fundamental Research of Belarus [H13K-023]
- State Funds for Fundamental Research of Ukraine [F54.3/007]
- Research Program Electronics and Photonics of the Republic of Belarus [2.2.19]
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Cadmium sulfide nanoparticle (NP) deposition by the successive ionic layer adsorption and reaction (SILAR) method on the surface of mesoporous ZnO micro-platelets with a large specific surface area (110 +/- 10 m(2)g(-1)) results in the formation of ZnO/CdS heterostructures exhibiting a high incident photon-to-current conversion efficiency (Y) not only within the region of CdS fundamental absorption (Y-max = 90%; 0.1M Na2S+ 0.1MNa(2)SO(3)), but also in the sub-band-gap (SBG) range (Y-max = 25%). The onset potentials of SBG photoelectrochemical processes are more positive than the band-gap (BG) onset potential by up to 100mV. A maximum incident photon-to-current conversion efficiency value for SBG processes is observed at larger amount of deposited CdS in comparison with the case of BG ones. The Urbach energy (E-U) of CdS NPs determined from the photocurrent spectra reaches a maximal value on an early deposition stage (E-U = 93 mV at SILAR cycle number N = 5), then lowers somewhat (E-U = 73mV at N = 10) and remains steady in the range of N from 20 to 300 (E-U = 67 +/- 1 mV). High efficiency of the photoelectrochemical SBG processes are interpreted in terms of light scattering in the ZnO/CdS heterostructures. (C) 2015 Elsevier B.V. All rights reserved.
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