High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 degrees C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm(2)/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. (C) 2015 Elsevier B. V. All rights reserved.