Journal
THIN SOLID FILMS
Volume 579, Issue -, Pages 136-143Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.02.060
Keywords
Tetrafluoromethane; Perfluorocyclobutane; Plasma diagnostics; Modeling; Reaction kinetics; Plasma modeling
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Funding
- Industrial Strategic Technology Development Program - Ministry of Knowledge Economy (MKE, Republic of Korea) [10041681]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10041681] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [22A20130012676] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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The effect of the O-2/Ar mixing ratio in CF4/O-2/Ar and C4F8/O-2/Ar inductively coupled plasmas with a 50% fluorocarbon gas content on plasma parameters and active species densities, which influence dry etching mechanisms, was analyzed. The investigation combined plasma diagnostics using Langmuir probes and zero-dimensional plasma modeling. It was found that, in both gas systems, the substitution of Ar for O-2 results in a similar change in the ion energy flux but causes the opposite behavior for the F atom flux. The mechanisms of these phenomena are discussed with regards to plasma chemistry. (C) 2015 Elsevier B.V. All rights reserved.
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