4.4 Article

Spray pyrolysis deposition of Cu3BiS3 thin films

Journal

THIN SOLID FILMS
Volume 585, Issue -, Pages 72-75

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.04.025

Keywords

Copper bismuth sulfide; Semiconductors; Thin films; Spray pyrolysis deposition; Solar energy materials

Funding

  1. National Natural Science Foundation of China [51402242]
  2. Fundamental Research Funds for the Central Universities [XDJK2014C134, SWU113024]
  3. Cultural Program for Young Talents of Science and Technology in Innovating New Products from CQ CSTC [CSTC2013KJRC-QNRC50001]

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Wittichenite Cu3BiS3 semiconductor thin films were deposited on glass slides within a range in substrate temperature from 250 degrees C to 400 degrees C via spray pyrolysis approach. Effects of substrate temperature on crystal structure, surface morphology, and optical property of Cu3BiS3 films were investigated in details. Pictures from a scanning electron microscope revealed that the as-prepared films in polycrystalline nature were uniform and comprised of close-packed fine nanoparticles, which grew up greatly by increasing substrate temperature to 350 degrees C. The as-prepared Cu3BiS3 film exhibited a direct optical band gap between 1.65 eV and 1.72 eV. (C) 2015 Elsevier B.V. All rights reserved.

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