Journal
THIN SOLID FILMS
Volume 582, Issue -, Pages 249-252Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2014.10.081
Keywords
Growth rate; Film thickness; Annealing; X-ray diffraction; Absorption coefficient; Band gap energy; Electrical resistivity
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Funding
- Spanish Ministry of Economy and Competitiveness through the CIEMAT
- CIEMAT
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Tin sulfide thin films were prepared by co-evaporation on soda-lime glass substrates, for use as absorber layers. The synthesis was carried out at 350 degrees C substrate temperature and varying the growth rate in the 2-6 angstrom/s range, adjusting the deposition time in order to obtain thicknesses in the 700-1500 nm range. After evaporation, the samples were heated at 400 degrees C and 500 degrees C under various atmospheres. The evolution of themorphological, structural and optical properties has been analyzed as a function of the thickness and deposition rate, before and after annealing. For the samples grown at the lowest rate, SnS and Sn2S3 phase mixing has been observed by X-ray diffraction. Samples with reduced thickness preferably crystallize in the SnS phase, whereas thicker layers become richer in the Sn2S3 phase. The sulfur treatment of samples prepared at the lowest rate results in the formation of SnS2 phase. Otherwise, the samples obtained at the highest rates show single-phase SnS after heating at 400 degrees C in sulfur atmosphere, with gap energy values around 1.24 eV. (C) 2014 Elsevier B.V. All rights reserved.
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