Journal
THIN SOLID FILMS
Volume 582, Issue -, Pages 166-170Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2014.09.037
Keywords
Copper zinc tin sulfoselenide; Cadmium selenide; Interface; Electronic structure; Electron spectroscopy
Categories
Funding
- Research and Development of Solar Energy Technology project of New Energy and Industrial Technology Development Organization (NEDO) of Japan
- Grants-in-Aid for Scientific Research [26420275] Funding Source: KAKEN
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The dependences of electronic structure of CZTS(x)Se(1-x) (CZTSSe) layers synthesized by sulfurization ancllor selenization of the vacuum-deposited metal precursors on the anion mixing ratio x=S/(S+Se) have been studied by in-situ ultraviolet and X-ray photoemission spectroscopies (UPS, XPS) and inverse photoemission spectroscopy (IPES). The band alignment at interfaces between the US buffer by the sequential evaporation and the CZTSSe (x=028 and 1.0) has also been investigated by the in-situ measurements of these spectroscopies. The UPS, IPES results of the CZTSSe surfaces have revealed linear expansion of band gap energy E-g with an increase of x: E-g(CZTSe: x=0) = 0.9-1,0 eV and E-g(CZTS: x = 1) 1.5-1.6 eV. This expansion mainly originates in the rise of conduction band minimum CBM: CBM(CZTSe x = 0) 0.45-0.50 eV and CBM(CZTS: x = 1) = 0.95-1.05 eV. The in situ measurements of the interface electronic structure have revealed that the CdS/CZTSSe (x=028) interface has a so-called type I band alignment with a conduction band offset CBO about 0.2 eV which is favorable to high cell performance. A negative CBO was distinguished for the CdS/CZTS (x=1.0) interface, and the observed change in the band alignment with the anion mixing ratio was consistent with that of the variation in cell performances, (C) 2014 Elsevier B.V. All rights reserved
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