Journal
OPTIK
Volume 174, Issue -, Pages 324-331Publisher
ELSEVIER GMBH, URBAN & FISCHER VERLAG
DOI: 10.1016/j.ijleo.2018.08.029
Keywords
F doped ZnS film; XRD; Raman; Optical properties
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Funding
- Anadolu University Commission of Scientific Research Projects [1705F286]
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ZnS and ZnS:F films were produced on glass substrates heated up to 350 +/- 5 degrees C by ultrasonic spray pyrolysis method. FTIR and Raman spectroscopy measurements were applied for determining phases included in undoped and F doped ZnS films. The scanning electron microscopy (SEM) images of the film surfaces showed that F doping caused significant contraction in particle size of the films. Energy Dispersive Spectrometer (EDS) analyses verified the presence of all expected elements including Zn, S and F. The optic characteristics of F doped ZnS films were analyzed by using their transmittance and reflectance spectra obtained by UV-vis spectrophotometer. It was determined that ZnS films exhibit a relatively high transmittance of 80% in the visible region. Refractive index values of the ZnS films showed similar conduct in 400-700 nm range. The optical band gap of the ZnS films decreased with F dopant. The electrical resistivity values of the films were calculated for the ZnS films by using current-voltage change graphics drawn in 0-100 V range through the measurement results obtained in room-temperature and dark setting and it was determined that F doping decreased resistivity values of the ZnS films.
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