Journal
OPTIK
Volume 125, Issue 12, Pages 2899-2901Publisher
ELSEVIER GMBH, URBAN & FISCHER VERLAG
DOI: 10.1016/j.ijleo.2013.11.074
Keywords
NiO; Cu dopant; Sol-gel; Crystallinity; Optical band gap
Categories
Funding
- Japan Society for the Promotion of Science (JSPS) [24760245]
- Grants-in-Aid for Scientific Research [24760245] Funding Source: KAKEN
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We prepared nickel oxide (NiO) thin films with p-type Cu dopants (5 at%) using a sol-gel solution process and investigated their structural, optical, and electrical characteristics by X-ray diffraction (XRD), atomic force microscopy (AFM), optical transmittance and current-voltage (I-V) characteristics. The crystallinity of the NiO films improved with the addition of Cu dopants, and the grain size increased from 38 nm (non-doped) to 50 nm (Cu-doped). The transmission of the Cu-doped NiO film decreased slightly in the visible wavelength region, and the absorption edge of the film red-shifted with the addition of the Cu dopant. Therefore, the width of the optical band gap of the Cu-doped NiO film decreased as compared to that of the non-doped NiO film. The resistivity of the Cu-doped NiO film was 23 Omega m, which was significantly less than that of the non-doped NiO film (320 Omega m). Thus, the case of Cu dopants on NiO films could be a plausible method for controlling the properties of the films. (c) 2014 Elsevier GmbH. All rights reserved.
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