Journal
OPTIK
Volume 124, Issue 14, Pages 1862-1864Publisher
ELSEVIER GMBH, URBAN & FISCHER VERLAG
DOI: 10.1016/j.ijleo.2012.06.027
Keywords
Recombination velocity; GaAs; Photocathode; Quantum efficiency
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The experiment result of American ITT company shows that the quick recombination velocity on the front surface of GaAs photocathode affects the quantum efficiency seriously. In order to explain this phenomenon theoretically, the quantum efficiency formula which include front surface recombination velocity is firstly deduced for reflection-mode GaAs photocathode by using integral deduction method, realize the evaluation of the photocathode parameters which cannot be detected directly, especially the quantum efficiency, provide a guidance to further study GaAs photocathode. (C) 2012 Elsevier GmbH. All rights reserved.
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