Journal
THIN SOLID FILMS
Volume 576, Issue -, Pages 68-74Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.01.006
Keywords
Liquid phase crystallization; Poly silicon; Preferential orientation
Categories
Funding
- Bundesministerium fur Umwelt, Naturschutz und Reaktorsicherheit (BMU) [0325446A]
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Liquid phase crystallization of 10 mu m thin silicon layers on glass substrates was performed with a line-shaped continuous wave laser beam. The process window was investigated in terms of the scanning velocity of the laser, the pre-heating of the specimens and the applied laser intensity. We have identified the entire process window, in which large-scale crystallization without deformation or destruction of the substrate and cracking of the silicon layer can be obtained. The grain orientations of the resulting Si layers were analyzed using both electron backscatter diffraction (EBSD) and X-ray diffraction (XRD). The influence of the critical crystallization parameters on the grain orientation of the silicon film was examined. EBSD and XRD measurements show that a preferential {100} surface texture and {100} and {101} orientations in scanning direction of the laser can be achieved if appropriate crystallization parameters are used. This texture formation is accompanied with a substantial decrease of high angle grain boundaries. (C) 2015 Published by Elsevier B.V.
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