Journal
THIN SOLID FILMS
Volume 591, Issue -, Pages 295-300Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.tsf.2015.06.008
Keywords
Germanium antimonide; Photoreflectance; Franz-Keldysh oscillations
Ask authors/readers for more resources
Optical properties of a p-Ge0.99Sn0.01 film grown on an n-Si substrate have been investigated as a function of temperature and excitation laser intensity using photoreflectance (PR) spectroscopy. The Ge0.99Sn0.01 film was grown by ultra-high vacuum chemical vapor deposition method. Room temperature PR spectrum shows a dominant signal assigned to a direct transition from the conduction G valley to valence band at around 0.73 eV. The transition to spin-orbit split-off band is also observed at around 1.0 eV. In addition, Franz-Keldysh oscillations (FKOs) due to the internal electric field are observed above the direct bandgap transition energy. The direct transition energy obtained by an analysis of FKO extremum was 0.728 eV at room temperature. The internal electric fields are reduced as the laser excitation intensity increases due to the photovoltage effect. The temperature dependence of direct transition energy was also investigated. (C) 2015 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available