Journal
OPTICS LETTERS
Volume 39, Issue 19, Pages 5649-5652Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.39.005649
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Funding
- National Nature Science Foundation of China [61131005]
- Chinese Ministry of Education [313013]
- National High-tech Research and Development Projects [2011AA010204]
- New Century Excellent Talent Foundation [NCET-11-0068]
- Sichuan Youth S T foundation [2011JQ0001]
- UESTC
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We present a broadband terahertz wave modulator with improved modulation depth and switch speed by cautiously selecting the gate dielectric materials in a large-area graphene-based field-effect transistor (GFET). An ultrathin Al2O3 film (similar to 60 nm) is deposited by an atomic-layer-deposition technique as a high-k gate dielectric layer, which reduces the Coulomb impurity scattering and cavity effect, and thus greatly improves the modulation performance. Our modulator has achieved a modulation depth of 22% and modulation speed of 170 kHz in a frequency range from 0.4 to 1.5 THz, which is a large improvement in comparison to its predecessor of SiO2-based GFET. (C) 2014 Optical Society of America
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