Journal
OPTICS LETTERS
Volume 39, Issue 14, Pages 4204-4207Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.39.004204
Keywords
-
Categories
Funding
- Basic Science Research Program
- National Research Foundation of Korea (NRF) - Ministry of Education, Science, and Technology [NRF-2011-0007997, 2012R1A2A2A02046890]
- National Research Foundation of Korea [2012R1A2A2A02046890] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
Ask authors/readers for more resources
In this Letter, we report Ge p-i-n avalanche photodetectors (APD) with low dark current (sub 1 mu A below V-R = 5 V), low operating voltage (avalanche breakdown voltage = 8-13 V), and high multiplication gain (440-680) by exploiting a point defect healing method (between 600 degrees C and 650 degrees C) and optimizing the doping concentration of the intrinsic region (p-type similar to 10(17) cm(-3)). In addition, Raman spectroscopy and electrochemical capacitance voltage analyses were performed to investigate the junction interfaces in more detail. This successful demonstration of Ge p-i-n APD with low dark current, low operating voltage, and high gain is promising for low-power and high-sensitivity Ge PD applications. (C) 2014 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
