Journal
OPTICS LETTERS
Volume 38, Issue 23, Pages 5055-5058Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.38.005055
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Funding
- National Research Foundation of Korea (NRF)
- Korean Government (MEST) [2011-0028769]
- LG Innotek Co., Korea
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ITO/Ag/ITO (IAI) multilayer-based transparent conductive electrodes for ultraviolet light-emitting diodes are fabricated by reactive sputtering, optimized by annealing, and characterized with respect to electrical and optical properties. Increasing the annealing temperature from 300 degrees C to 500 degrees C decreased the sheet resistance and increased the transmittance. This may result from an observed improvement in the crystallinity of the IAI multilayer and a reduction in the near-UV absorption coefficient of Ag. We observed the lowest sheet resistance (9.21 Omega/sq) and the highest optical transmittance (88%) at 380 nm for the IAI multilayer samples annealed in N-2 gas at 500 degrees C. (C) 2013 Optical Society of America
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