Journal
OPTICS LETTERS
Volume 38, Issue 9, Pages 1582-1584Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.38.001582
Keywords
-
Categories
Funding
- National High Technology Research and Development Program of China (863 Program) [2011AA010205]
- National Natural Science Foundation of China [61171027]
- Natural Science Foundation of Tianjin of China [10JCZDJC15200]
Ask authors/readers for more resources
The state conversion and terahertz (THz) wave modulation based on a plasmonic device composed of silicon column arrays with vanadium dioxide (VO2) coating were experimentally demonstrated. For double 45 degrees tilted optical pumping, a state conversion from dielectric photonic crystal (PC) to metallic PC was demonstrated due to the insulator-metal transition (IMT) of VO2 with the pump power increasing. In this process, a broadband intensity modulation with 70% modulation depth was achieved. Furthermore, for normally incident optical pumping, another state conversion from dielectric PC to plasmonic device was also demonstrated due to the partial IMT of VO2, and the out of plane PC resonance gradually changed to be plasmonic resonances. This device and its modulation scheme will be of great significance for potential THz applications. (C) 2013 Optical Society of America
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available