Journal
OPTICS LETTERS
Volume 37, Issue 19, Pages 4035-4037Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.37.004035
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Funding
- Innovation and Technology Funding of Hong Kong [ITS/086/10]
- Research Grants Council of The Hong Kong Special Administrative Region, China [614708, 615509]
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We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 mu A and a responsivity of 0.17 A/W at 1550 nm wavelength upon -1 V bias voltage, with a 20 mu m x 20 mu m InGaAs photodetector area. This device exhibits a 3 dB bandwidth of 9 GHz upon -4 V bias voltage. We demonstrate an open-eye diagram at 10 Gb/s data rate upon -4 V bias voltage. (c) 2012 Optical Society of America
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