Journal
OPTICS LETTERS
Volume 37, Issue 17, Pages 3693-3695Publisher
OPTICAL SOC AMER
DOI: 10.1364/OL.37.003693
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Funding
- National Key Basic Research Program of China [2011CB301905, 2012CB619306]
- National High-Tech Research and Development Program of China [2011AA03A103]
- National Natural Science Foundation of China [61076012, 61076013, 60990314, 60976009, U0834001]
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The optical polarization properties of staggered AlGaN-AlGaN/AlN quantum wells (QWs) are investigated using the theoretical model based on the k . p method. The numerical results show that the energy level order and coupling relation of the valence subband structure change in the staggered QWs and the trend is beneficial to TE polarized transition compared to that of conventional AlGaN/AlNQWs. As a result, the staggered QWs have much stronger TE-polarized emission than conventional AlGaN-based QWs, which can enhance the surface emission of deep ultraviolet (DUV) light-emitting diodes (LEDs). The polarization control by using staggered QWs can be applied in high efficiency DUV AlGaN-based LEDs. (c) 2012 Optical Society of America
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